Journal
POLYMER
Volume 51, Issue 26, Pages 6319-6333Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.polymer.2010.10.053
Keywords
Ultra-thin P(VDF-TrFE) film; Chain and dipole orientation; Nonvolatile ferroelectric polymer memory
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Funding
- Ministry of Education, Science and Technology [R11-2005-065]
- Korea Ministry of Commerce, Industry and Energy
- National Research Foundation of Korea [2008-0057632] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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The ferroelectric behavior of spin-cast ultra-thin P(VDF-TrFE) (72-28) film is highly influenced by sample preparation methods including thermal annealing. The effect of sample preparation methods on the surface morphology, chain and dipole orientation, ferroelectric properties, and nonvolatile memory characteristics were studied using FTIR-grazing incident reflection absorption spectroscopy (GIRAS), grazing incident wide angle X-ray diffraction (GIWAXD), atomic force microscope (AFM), dynamic contact electrostatic force microscope (DC-EFM), and polarization-electric field (P-E) hysteresis measurements to find the feasibility of applying the ultra-thin P(VDF-TrFE) film to scanning probe microscopy (SPM)-based storage device or low-cost nonvolatile ferroelectric polymer random access memory (NvFePoRAM) device. From the collective analysis of GIRAS, GIWAXD, and AFM data, annealing the as-cast sample at temperature (ca. 120 degrees C) above Curie transition, but below its melting transition temperature was found to be the most suitable condition to fabricate the NvFePoRAM and/or SPM-based storage device with a memory density of about 30 GB/in(2). DC-EFM technique was successfully used to characterize the nonvolatile memory properties by 'writing and erasing' the data bit through applying a dc bias voltage much larger than coercive voltage with different polarities and then reading the data bit by applying a high frequency ac voltage of only 2 V to the 'written or erased' area. (C) 2010 Elsevier Ltd. All rights reserved.
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