Novel valuable fluorine free copper(I) precursors for copper chemical vapor deposition

Novel fluorine free (beta-diketonate)Cu((I))BTMSA precursors (where BTMSA is bis(trimethylsilyl) acetylene) were prepared in good yield (63-80%) by a simple acid-base reaction. The starting beta-diketone structure was modified for tailoring physico-chemical properties of synthesized precursors. High volatile, relative thermally stable and low-melting precursors were prepared when asymmetric beta-diketones were used. By using the (1-(cyclobutyl)-1,3-butandionate)Cu((I))BTMSA precursor, highly pure, compact and smooth copper films were deposited on Ta/TaN substrates at deposition temperatures as low as 150 degrees C. (C) 2009 Elsevier Ltd. All rights reserved.