Journal
ACTA MATERIALIA
Volume 87, Issue -, Pages 259-265Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.actamat.2015.01.022
Keywords
Perpendicular magnetic anisotropy (PMA); Interface anisotropy; CoFeB/MgO; Annealing stability; B diffusion
Funding
- National Research Foundation of Korea (NRF) - Ministry of Education [NRF-2013R1A1A2060350]
- National Research Foundation of Korea [2013R1A1A2060350] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Typical CoFeB/MgO frames ensuring interface perpendicular magnetic anisotropy (PMA) features are one of the most reliable building blocks to meet the demand of PMA-based memory devices. However, employing the CoFeB/MgO frame with a Ta buffer layer has been restricted by the rapid PMA degradation that occurs during annealing at temperatures greater than 300 degrees C and the need of an ultrathin CoFeB layer of approximately 1.3 nm. Thus, the ability to enhance thermally strong PMA characteristics is still a key step toward extending their use. Here, we examine the effect of W layers on PMA features through both W buffer/CoFeB/MgO and MgO/CeFeB/W capping frames at various annealing temperatures. Highly stable PMA was achieved up to 450 degrees C at a specific W thickness, along with the presence of the dominant PMA properties at a relatively thick CoFeB greater than 1.3 nm and the achievement of a high K-eff of approximately 5 Merg/cc. (C) 2015 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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