Journal
PLASMONICS
Volume 7, Issue 4, Pages 695-699Publisher
SPRINGER
DOI: 10.1007/s11468-012-9360-6
Keywords
CMOS image sensors; Colour filters; Surface plasmons; Subwavelength structures
Funding
- UK EPSRC
- Engineering and Physical Sciences Research Council [EP/C509927/1, EP/D501288/1, EP/G006784/1] Funding Source: researchfish
- EPSRC [EP/G006784/1, EP/D501288/1] Funding Source: UKRI
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Multi-pixel, 4.5 x 9 mu m, plasmonic colour filters, consisting of periodic subwavelength holes in an aluminium film, were directly integrated on the top surface of a complementary metal oxide semiconductor (CMOS) image sensor (CIS) using electron beam lithography and dry etch. The 100 x 100-pixel plasmonic CIS showed full colour sensitivities across the visible range determined by a photocurrent measurement. The filters were fabricated in a simple process utilising a single lithography step. This is to be compared with the traditional multi-step processing when using dye-doped polymers. The intrinsic compatibility of these plasmonic components with a standard CMOS process allows them to be manufactured in a metal layer close to the photodiodes. The incorporation of such plasmonic components may in the future enable the development of advanced CIS with low cost, low cross-talk and increased functionality.
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