Deposition of Dielectric Films with Inductively Coupled Plasma-CVD in Dependence on Pressure and Two RF-Power-Sources

This paper presents the investigations of thin dielectric silicon oxide (SiOx) and silicon nitride (SiNx) films deposited below 100 degrees C by a plasma enhanced chemical vapour deposition (PECVD) using an inductively coupled plasma (ICP)-source. The influence of the deposition pressure and the applied RF-power to the plasma from the ICP-source and a second RF-power at substrate electrode on the characteristics of the deposited films are studied. The investigated characteristics are refractive index R.I. at 632 nm, deposition rate R-dep, stress sigma and etching rate R-etch in buffered hydrofluoric acid (BHF). Measurements from electron spectroscopy for chemical analysis (ESCA) support the investigations. The results are discussed and compared with other PECVD deposition methods. A significant influence of the RF-generator connected to substrate electrode on etching rate and hence on film quality is identified for SiOx but the converse effect is identified for SiNx-films.