Related references
Note: Only part of the references are listed.Atomic Layer Deposition of High-k Oxides of the Group 4 Metals for Memory Applications
Jaakko Niinisto et al.
ADVANCED ENGINEERING MATERIALS (2009)
Integration of SrBi2Ta2O9 thin films for high density ferroelectric random access memory
D. J. Wouters et al.
JOURNAL OF APPLIED PHYSICS (2006)
Ferroelectricity at the nanoscale: Local polarization in oxide thin films and heterostructures
CH Ahn et al.
SCIENCE (2004)
Nonvolatile magnetoresistive random-access memory based on magnetic tunnel junctions
G Grynkewich et al.
MRS BULLETIN (2004)
Fabrication of ferroelectric gate memory device using BLT/HfO2/Si gate structure
SM Yoon et al.
INTEGRATED FERROELECTRICS (2003)
First 0.18 mu m SBT-Based embedded FeRAM technology with hydrogen damage free stacked cell structure
E Fujii et al.
INTEGRATED FERROELECTRICS (2003)
Plasma etch processes for embedded FRAM integration
FG Celii et al.
INTEGRATED FERROELECTRICS (2003)
Share Paper
