Influence of delta⟨Mn⟩ doping parameters of the GaAs barrier on circularly polarized luminescence of GaAs/InGaAs heterostructures

The circular polarization of low-temperature electroluminescence of diodes based on heterostructures with an undoped quantum well InGaAs/GaAs and a deltaaOE (c) Mn > layer in the GaAs barrier has been investigated. The possibility of changing the degree of circular polarization of the electroluminescence by varying the main structural parameters of diodes (spacer layer thickness, i.e., the distance between the deltaaOE (c) Mn > layer and the quantum well, atomic concentration in the deltaaOE (c) Mn > layer, and introduction of an additional acceptor delta layer) has been analyzed. It has been revealed that the variation in the spacer layer thickness is the most effective method for controlling the degree of circular polarization of the electroluminescence.