Journal
PHYSICS LETTERS A
Volume 383, Issue 1, Pages 76-82Publisher
ELSEVIER
DOI: 10.1016/j.physleta.2018.09.012
Keywords
Four- and eight-membered rings; Boron nitride nanotubes; Stability; Third-generation semiconductors
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Funding
- National Natural Science Foundation of China [11464044]
- Foundation of Key Laboratory of Mineral Luminescent Material and Microstructure of Xinjiang [KWFG1709]
- 13th Five-Year Plan for Key Discipline Physics Bidding Project, Xinjiang Normal University [17SDKD0601]
- Xinjiang Normal University [17SDKD0601]
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The properties of boron nitride nanotubes composed of four- and eight-membered rings (referred to as four-eight-membered rings BNNTs) were calculated using density functional theory (DFT). The calculated results show that the band gap of the four-eight-membered rings BNNTs is greatly reduced, down to a range of 2.530-3.975 eV. The band gap decreases as the number of walls increases, not only enabling the allotropes to show semiconductor properties but also to fully meet the third-generation semiconductor band gap requirements, furthermore, the band gap decreases significantly with the number of walls increases. (C) 2018 Elsevier B.V. All rights reserved.
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