Journal
PHYSICAL REVIEW LETTERS
Volume 121, Issue 13, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.121.135701
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Funding
- U.S. Department of Energy (DOE), National Nuclear Security Administration (NNSA) [DE-NA0002007]
- DOE/NNSA [DE-NA0002442]
- DOE Office of Science [DE-AC02-06CH11357]
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In situ, time-resolved, x-ray diffraction and simultaneous continuum measurements were used to examine structural changes in Si shock compressed to 54 GPa. Shock melting was unambiguously established above similar to 31-33 GPa, through the vanishing of all sharp crystalline diffraction peaks and the emergence of a single broad diffraction ring. Reshock from the melt boundary results in rapid (nanosecond) recrystallization to the hexagonal-close-packed Si phase and further supports melting. Our results also provide new constraints on the high-temperature, high-pressure Si phase diagram.
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