Journal
PHYSICAL REVIEW LETTERS
Volume 121, Issue 5, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.121.057403
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Funding
- National Science Foundation through the Center for Dynamics and Control of Materials: an NSF MRSEC [DMR-1720595]
- Welch Foundation [F-1662]
- National Science Foundation (NSF) CAREER Grant [DMR-1455346]
- Air Force Office of Scientific Research (AFOSR) [FA9550-17-1-0304]
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In atomically thin two-dimensional semiconductors such as transition metal dichalcogenides (TMDs), controlling the density and type of defects promises to be an effective approach for engineering light-matter interactions. We demonstrate that electron-beam irradiation is a simple tool for selectively introducing defect-bound exciton states associated with chalcogen vacancies in TMDs. Our first-principles calculations and time-resolved spectroscopy measurements of monolayer WSe2 reveal that these defect-bound excitons exhibit exceptional optical properties including a recombination lifetime approaching 200 ns and a valley lifetime longer than 1 mu s. The ability to engineer the crystal lattice through electron irradiation provides a new approach for tailoring the optical response of TMDs for photonics, quantum optics, and valleytronics applications.
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