Journal
PHYSICAL REVIEW LETTERS
Volume 112, Issue 15, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.112.153603
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Funding
- DARPA ORCHID program
- Institute for Quantum Information and Matter, a NSF Physics Frontiers Center
- Kavli Nanoscience Institute at Caltech
- NSERC
- Marie Curie International Outgoing Fellowship within the 7th European Community Framework Programme
- Gordon and Betty Moore Foundation
- MESO program
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We present the fabrication and characterization of an artificial crystal structure formed from a thin film of silicon that has a full phononic band gap for microwave X-band phonons and a two- dimensional pseudoband gap for near-infrared photons. An engineered defect in the crystal structure is used to localize optical and mechanical resonances in the band gap of the planar crystal. Two- tone optical spectroscopy is used to characterize the cavity system, showing a large coupling (g(0)/2 pi approximate to 220 kHz) between the fundamental optical cavity resonance at omega(o)/2 pi = 195 THz and colocalized mechanical resonances at frequency omega(m)/2 pi approximate to 9.3 GHz.
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