Journal
PHYSICAL REVIEW LETTERS
Volume 113, Issue 14, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.113.147201
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Funding
- Defense Advanced Research Projects Agency Microsystems Technology Office, MesoDynamic Architecture Program (MESO) [N66001-11-1-4105, N66001-11-1-4110]
- FAME, one of six centers of STARnet, a Semiconductor Research Corporation program
- MARCO
- DARPA
- Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [DE-AC02-76SF00515]
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The quantum anomalous Hall effect has recently been observed experimentally in thin films of Cr-doped (Bi, Sb)(2)Te-3 at a low temperature (similar to 30 mK). In this work, we propose realizing the quantum anomalous Hall effect in more conventional diluted magnetic semiconductors with magnetically doped InAs/GaSb type-II quantum wells. Based on a four-band model, we find an enhancement of the Curie temperature of ferromagnetism due to band edge singularities in the inverted regime of InAs/GaSb quantum wells. Below the Curie temperature, the quantum anomalous Hall effect is confirmed by the direct calculation of Hall conductance. The parameter regime for the quantum anomalous Hall phase is identified based on the eight-band Kane model. The high sample quality and strong exchange coupling make magnetically doped InAs/GaSb quantum wells good candidates for realizing the quantum anomalous Hall insulator at a high temperature.
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