Journal
PHYSICAL REVIEW LETTERS
Volume 113, Issue 4, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.113.047206
Keywords
-
Categories
Funding
- University of Maryland NSF-MRSEC [DMR 05-20471]
- U.S. ONR MURI program
- ARC Laureate Fellowship
- National Research Foundation Singapore [NRF-NRFF2012-01]
Ask authors/readers for more resources
We predict and demonstrate that a disorder-induced carrier density inhomogeneity causes magnetoresistance (MR) in a two-dimensional electron system. Our experiments on graphene show a quadratic MR persisting far from the charge neutrality point. Effective medium calculations show that for charged impurity disorder, the low-field MR is a universal function of the ratio of carrier density to fluctuations in carrier density, a power law when this ratio is large, in excellent agreement with experiment. The MR is generic and should occur in other materials with large carrier density inhomogeneity.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available