4.8 Article

Large-Chern-Number Quantum Anomalous Hall Effect in Thin-Film Topological Crystalline Insulators

Journal

PHYSICAL REVIEW LETTERS
Volume 112, Issue 4, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.112.046801

Keywords

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Funding

  1. AFOSR [FA9550-10-1-0459]
  2. ONR [N0014-11-1-0728]
  3. NSF CAREER [DMR-095242]
  4. David and Lucile Packard Foundation
  5. [ONR-N00014-11-1-0635]
  6. [Darpa-N66001-11-1-4110]
  7. [MURI-130-6082]
  8. Direct For Mathematical & Physical Scien
  9. Division Of Materials Research [0952428] Funding Source: National Science Foundation

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We theoretically predict that thin-film topological crystalline insulators can host various quantum anomalous Hall phases when doped by ferromagnetically ordered dopants. Any Chern number between +/-4 can, in principle, be reached as a result of the interplay between (a) the induced Zeeman field, depending on the magnetic doping concentration, (b) the structural distortion, either intrinsic or induced by a piezoelectric material through the proximity effect, and (c) the thickness of the thin film. We propose a heterostructure to realize quantum anomalous Hall phases with Chern numbers that can be tuned by electric fields.

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