Journal
PHYSICAL REVIEW LETTERS
Volume 112, Issue 11, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.112.117801
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Funding
- European Research Council under the European Union's Seventh Framework Programme (FP7/2007-2013)/ERC [319286]
- National Research Foundatione
- Ministry of Education of Singapore
- Grants-in-Aid for Scientific Research [25247049] Funding Source: KAKEN
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We measure the ultrafast recombination of photoexcited quasiparticles (holon-doublon pairs) in the one dimensional Mott insulator ET-F(2)TCNQ as a function of external pressure, which is used to tune the electronic structure. At each pressure value, we first fit the static optical properties and extract the electronic bandwidth t and the intersite correlation energy V. We then measure the recombination times as a function of pressure, and we correlate them with the corresponding microscopic parameters. We find that the recombination times scale differently than for metals and semiconductors. A fit to our data based on the time-dependent extended Hubbard Hamiltonian suggests that the competition between local recombination and delocalization of the Mott-Hubbard exciton dictates the efficiency of the recombination.
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