Journal
PHYSICAL REVIEW LETTERS
Volume 112, Issue 3, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.112.036803
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Funding
- NSF [DMR-1105183]
- Gordon and Betty Moore Foundation [GBMF2719]
- National Science Foundation at the Princeton Center for Complex Materials [MRSEC-DMR-0819860]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1105183] Funding Source: National Science Foundation
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In high quality updoped GaAs field-effect transistors, the two-dimensional charge carrier concentrations can be tuned to very low values similar to the density of electrons on helium surfaces. An important interaction effect, screening of the Coulomb interaction by the gate, rises as a result of the large charge spacing comparable to the distance between the channel and the gate. Based on the results of the temperature (T) dependence of the resistivity from measuring four different samples, a power-law characteristic is found for charge densities <= 2 x 10(9) cm(-2). Moreover, the exponent exhibits a universal dependence on a single dimensionless parameter, the ratio between the mean carrier separation and the distance to the metallic gate that screens the Coulomb interaction. Thus, the electronic properties are tuned through varying the shape of the interaction potential.
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