Journal
PHYSICAL REVIEW LETTERS
Volume 113, Issue 2, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.113.026804
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Funding
- Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [DE-AC02-76SF00515]
- [DOE-DEFG0206ER46274]
- [Welch C-1682]
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Quantum spin Hall devices with edges much longer than several microns do not display ballistic transport; that is, their measured conductances are much less than e(2)/h per edge. We imaged edge currents in InAs/GaSb quantum wells with long edges and determined an effective edge resistance. Surprisingly, although the effective edge resistance is much greater than h/e(2), it is independent of temperature up to 30 K within experimental resolution. Known candidate scattering mechanisms do not explain our observation of an effective edge resistance that is large yet temperature independent.
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