Journal
PHYSICAL REVIEW LETTERS
Volume 112, Issue 18, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.112.186801
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Funding
- NSFC [11025419, 11074139, 51331006]
- MOST [2011CB921901, 2011CB921904, 2011CB606405]
- DOE Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [DE-SC0010526]
- STC Center for Integrated Quantum Materials, NSF [DMR1231319]
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The surface of a topological crystalline insulator (TCI) carries an even number of Dirac cones protected by crystalline symmetry. We epitaxially grew high-quality Pb1-xSnxTe(111) films and investigated the TCI phase by in situ angle-resolved photoemission spectroscopy. Pb1-xSnxTe(111) films undergo a topological phase transition from a trivial insulator to TCI via increasing the Sn/Pb ratio, accompanied by a crossover from n-type to p-type doping. In addition, a hybridization gap is opened in the surface states when the thickness of the film is reduced to the two-dimensional limit. The work demonstrates an approach to manipulating the topological properties of TCI, which is of importance for future fundamental research and applications based on TCI.
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