Electrically Driven Spin Resonance in Silicon Carbide Color Centers

We demonstrate that the spin of optically addressable point defects can be coherently driven with ac electric fields. Based on magnetic-dipole forbidden spin transitions, this scheme enables spatially confined spin control, the imaging of GHz-frequency electric fields, and the characterization of defect spin multiplicity. We control defect ensembles in SiC, but our methods apply to spin systems in many semiconductors, including the diamond nitrogen-vacancy center. Electrically driven spin resonance offers a viable route towards scalable quantum control of electron spins in a dense array.