Journal
PHYSICAL REVIEW LETTERS
Volume 111, Issue 2, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.111.025502
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Funding
- Cambridge Commonwealth trust
- EPSRC
- Cambridge-India Partnership Fund
- Royal Society
- Engineering and Physical Sciences Research Council [EP/J016101/1, EP/I012591/1, EP/G042330/1, 1089898, EP/H019324/1] Funding Source: researchfish
- EPSRC [EP/I012591/1, EP/G042330/1, EP/J016101/1, EP/H019324/1] Funding Source: UKRI
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Aberration-corrected scanning transmission electron microscopy was used to investigate the core structures of threading dislocations in undoped GaN films with both high and low dislocation densities, and in a comparable high dislocation density Mg-doped GaN film. All a-type dislocations in all samples have a 5/7-atom core structure. In contrast, most (a + c)-type dislocations in undoped GaN dissociate due to local strain variations from nearby dislocations. In contrast, Mg doping prevents (a + c)-type dislocation dissociation. Our data indicate that Mg affects dislocation cores in GaN significantly.
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