4.8 Article

Competing Misfit Relaxation Mechanisms in Epitaxial Correlated Oxides

Journal

PHYSICAL REVIEW LETTERS
Volume 110, Issue 10, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.110.107206

Keywords

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Funding

  1. Spanish Ministerio de Economia y Competitividad
  2. Consejo Superior de Investigaciones Cientificas
  3. Spanish MEC [MAT2009-08024, MAT2011-29081]
  4. CONSOLIDER [CSD2007-00041, CSD2008-00023]
  5. FEDER program
  6. Spanish MEC through the RyC program

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Strain engineering of functional properties in epitaxial thin films of strongly correlated oxides exhibiting octahedral-framework structures is hindered by the lack of adequate misfit relaxation models. Here we present unreported experimental evidence of a four-stage hierarchical development of octahedral-framework perturbations resulting from a progressive imbalance between electronic, elastic, and octahedral tilting energies in La0.7Sr0.3MnO3 epitaxial thin films grown on SrTiO3 substrates. Electronic softening of the Mn-O bonds near the substrate leads to the formation of an interfacial layer clamped to the substrate with strongly degraded magnetotransport properties, i.e., the so-called dead layer, while rigid octahedral tilts become relevant at advanced growth stages without significant effects on charge transport and magnetic ordering. DOI: 10.1103/PhysRevLett.110.107206

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