Journal
PHYSICAL REVIEW LETTERS
Volume 110, Issue 10, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.110.107204
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Funding
- JST, PRESTO
- Funding Program for World-Leading Innovation R & D on Science and Technology (FIRST)
- Department of Energy, Office of Basic Energy Sciences, Materials Sciences and Engineering Division [DE-AC02-76SF00515]
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We investigate the two-dimensional highly spin-polarized electron accumulation layers commonly appearing near the surface of n-type polar semiconductors BiTeX (X = I, Br, and Cl) by angular-resolved photoemission spectroscopy. Because of the polarity and the strong spin-orbit interaction built in the bulk atomic configurations, the quantized conduction-band subbands show giant Rashba-type spin splitting. The characteristic 2D confinement effect is clearly observed also in the valence bands down to the binding energy of 4 eV. The X-dependent Rashba spin-orbit coupling is directly estimated from the observed spin-split subbands, which roughly scales with the inverse of the band-gap size in BiTeX. DOI: 10.1103/PhysRevLett.110.107204
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