Journal
PHYSICAL REVIEW LETTERS
Volume 111, Issue 15, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.111.156402
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Funding
- NSFC [10934007]
- MOST of China [2011CB922204]
- MRSEC [NSF-DMR1121053]
- ConvEne-IGERT Program [NSF-DGE 0801627]
- DARPA Program [N66001-12-1-4034]
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We demonstrate theoretically that interface engineering can drive germanium, one of the most commonly used semiconductors, into a topological insulating phase. Utilizing giant electric fields generated by charge accumulation at GaAs/Ge/GaAs opposite semiconductor interfaces and band folding, the new design can reduce the sizable gap in Ge and induce large spin-orbit interaction, which leads to a topological insulator transition. Our work provides a new method to realize topological insulators in commonly used semiconductors and suggests a promising approach to integrate it in well-developed semiconductor electronic devices.
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