Journal
PHYSICAL REVIEW LETTERS
Volume 110, Issue 21, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.110.216402
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Funding
- NSF DMR Grant [1206612]
- Simons Foundation
- Bikura (FIRST) program of the Israel Academy of Science
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1206612] Funding Source: National Science Foundation
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We study the influence of electron puddles created by doping of a 2D topological insulator on its helical edge conductance. A single puddle is modeled by a quantum dot tunnel coupled to the helical edge. It may lead to significant inelastic backscattering within the edge because of the long electron dwelling time in the dot. We find the resulting correction to the perfect edge conductance. Generalizing to multiple puddles, we assess the dependence of the helical edge resistance on the temperature and doping level and compare it with recent experimental data.
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