Journal
PHYSICAL REVIEW LETTERS
Volume 110, Issue 21, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.110.216601
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Funding
- Center on Functional Engineered Nano Architectonics (FENA)
- W.M. Keck Foundation
- Stanford Center for Probing the Nanoscale
- NSF NSEC [PHY-0830228]
- Stanford Graduate Fellowship
- Grants-in-Aid for Scientific Research [23310096, 24651148] Funding Source: KAKEN
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The fate of the low-temperature conductance at the charge-neutrality (Dirac) point in a single sheet of graphene on boron nitride is investigated down to 20 mK. As the temperature is lowered, the peak resistivity diverges with a power-law behavior and becomes as high as several megohms per square at the lowest temperature, in contrast with the commonly observed saturation of the conductivity. As a perpendicular magnetic field is applied, our device remains insulating and directly transitions to the broken-valley-symmetry, nu = 0 quantum Hall state, indicating that the insulating behavior we observe at zero magnetic field is a result of broken valley symmetry. Finally we discuss the possible origins of this effect.
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