4.8 Article

Electronic Origin of Ultrafast Photoinduced Strain in BiFeO3

Journal

PHYSICAL REVIEW LETTERS
Volume 110, Issue 3, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.110.037601

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Funding

  1. U.S Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-AC02-06CH11357]
  2. U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [DEFG02-10ER46147]
  3. Army Research Office [W911NF-08-2-0032]
  4. U.S. Department of Energy's National Nuclear Security Administration [DE-AC04-94AL85000]

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Above-band-gap optical excitation produces interdependent structural and electronic responses in a multiferroic BiFeO3 thin film. Time-resolved synchrotron x-ray diffraction shows that photoexcitation can induce a large out-of-plane strain, with magnitudes on the order of half of one percent following pulsed-laser excitation. The strain relaxes with the same nanosecond time dependence as the interband relaxation of excited charge carriers. The magnitude of the strain and its temporal correlation with excited carriers indicate that an electronic mechanism, rather than thermal effects, is responsible for the lattice expansion. The observed strain is consistent with a piezoelectric distortion resulting from partial screening of the depolarization field by charge carriers, an effect linked to the electronic transport of excited carriers. The nonthermal generation of strain via optical pulses promises to extend the manipulation of ferroelectricity in oxide multiferroics to subnanosecond time scales. DOI: 10.1103/PhysRevLett.110.037601

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