Journal
PHYSICAL REVIEW LETTERS
Volume 110, Issue 22, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.110.227402
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Funding
- NHMFL [UCGP-5068]
- DOE/BES [DE-FG02-07ER46451, DE-FG02-06ER46308]
- Robert A. Welch Foundation [C-1509]
- EPSRC [GR/S97613/01, EP/E500935/1, EP/K01711X/1, EP/K017144/1, EP/G042357/1]
- ERC
- EU
- Leverhulme Trust
- NSF ECCS [0925988]
- ERC AdG Graphene and Beyond''
- NSF [DMR-0654118]
- State of Florida
- DOE
- Royal Society
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1006663] Funding Source: National Science Foundation
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [0925988] Funding Source: National Science Foundation
- Engineering and Physical Sciences Research Council [EP/G042357/1, EP/G035954/1, GR/S97613/01, EP/K01711X/1, EP/K017144/1, EP/E500935/1] Funding Source: researchfish
- EPSRC [EP/G035954/1, EP/K01711X/1, EP/K017144/1, EP/G042357/1, EP/E500935/1] Funding Source: UKRI
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We perform polarization-resolved Raman spectroscopy on graphene in magnetic fields up to 45 T. This reveals a filling-factor-dependent, multicomponent anticrossing structure of the Raman G peak, resulting from magnetophonon resonances between magnetoexcitons and E-2g phonons. This is explained with a model of Raman scattering taking into account the effects of spatially inhomogeneous carrier densities and strain. Random fluctuations of strain-induced pseudomagnetic fields lead to increased scattering intensity inside the anticrossing gap, consistent with the experiments.
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