Journal
PHYSICAL REVIEW LETTERS
Volume 111, Issue 18, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.111.186801
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- Dutch Polymer Institute (DPI) [660, 678]
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An analytical expression for the diffusion current in organic metal-insulator-metal diodes is derived. The derivation is based on the classical diffusion theory of Schottky, with adaptations to account for the absence of doping, a built-in voltage due to asymmetric contacts, and band bending at the Ohmic contact. The commonly observed deviation of the ideality factor from unity (similar to 1.2) is characteristic of diffusion-limited currents in undoped organic semiconductors. Summing with the classical space-charge limited current provides a full analytic description of the current as a function of voltage, temperature and layer thickness.
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