Journal
PHYSICAL REVIEW LETTERS
Volume 108, Issue 3, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.108.036805
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Funding
- National Natural Science Foundation of China
- Ministry of Science and Technology of China [2009CB929400]
- Chinese Academy of Sciences
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We report transport studies on magnetically doped Bi2Se3 topological insulator ultrathin films grown by molecular beam epitaxy. The magnetotransport behavior exhibits a systematic crossover between weak antilocalization and weak localization with the change of magnetic impurity concentration, temperature, and magnetic field. We show that the localization property is closely related to the magnetization of the sample, and the complex crossover is due to the transformation of Bi2Se3 from a topological insulator to a topologically trivial dilute magnetic semiconductor driven by magnetic impurities. This work demonstrates an effective way to manipulate the quantum transport properties of the topological insulators by breaking time-reversal symmetry.
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