Journal
PHYSICAL REVIEW LETTERS
Volume 109, Issue 23, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.109.237401
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- RTRA [PAO 2008-057T]
- ANR contract LAPSUS
- region Ile de France through a C'Nano Idf project
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The electromagnetic modes of a GaAs quantum well between two AlGaAs barriers are studied. At the longitudinal optical phonon frequency, the system supports a phonon polariton mode confined in the thickness of the quantum well that we call epsilon-near-zero mode. This epsilon-near-zero mode can be resonantly excited through a grating resulting in a very large absorption localized in the single quantum well. We show that the reflectivity can be modulated by applying a voltage. This paves the way to a new class of active optoelectronic devices working in the midinfrared and far infrared at ambient temperature. DOI: 10.1103/PhysRevLett.109.237401
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