Journal
PHYSICAL REVIEW LETTERS
Volume 109, Issue 18, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.109.187603
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Funding
- Swedish Energy Agency
- Swedish Research Council VR/Linne Environment LiLI-NFM
- Knut and Alice Wallenberg Foundation
- Norwegian Research Council
- JSPS [21226008]
- Grants-in-Aid for Scientific Research [21226008] Funding Source: KAKEN
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Using electron paramagnetic resonance (EPR), energy levels of the carbon vacancy (V-C) in 4H-SiC and its negative-U properties have been determined. Combining EPR and deep-level transient spectroscopy we show that the two most common defects in as-grown 4H-SiC-the Z(1/2) lifetime-limiting defect and the EH7 deep defect-are related to the double acceptor (2 - vertical bar 0) and single donor (0 vertical bar +) levels of V-C, respectively.
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