Journal
PHYSICAL REVIEW LETTERS
Volume 108, Issue 24, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.108.246104
Keywords
-
Categories
Funding
- Deutsche Forschungsgemeinschaft
- ESF through the EUROCORES
Ask authors/readers for more resources
We explain the robust p-type doping observed for quasi-free-standing graphene on hexagonal silicon carbide by the spontaneous polarization of the substrate. This mechanism is based on a bulk property of SiC, unavoidable for any hexagonal polytype of the material and independent of any details of the interface formation. We show that sign and magnitude of the polarization are in perfect agreement with the doping level observed in the graphene layer. With this mechanism, models based on hypothetical acceptor-type defects as they are discussed so far are obsolete. The n-type doping of epitaxial graphene is explained conventionally by donorlike states associated with the buffer layer and its interface to the substrate that overcompensate the polarization doping.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available