Journal
PHYSICAL REVIEW LETTERS
Volume 109, Issue 4, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.109.046801
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Funding
- CNPq
- NSF-DMR [10-04147, 08-45358]
- MEXT [20241023, 23710118]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1004147] Funding Source: National Science Foundation
- Grants-in-Aid for Scientific Research [23710118, 20241023] Funding Source: KAKEN
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Phonon self-energy corrections have mostly been studied theoretically and experimentally for phonon modes with zone-center (q = 0) wave vectors. Here, gate-modulated Raman scattering is used to study phonons of a single layer of graphene originating from a double-resonant Raman process with q not equal 0. The observed phonon renormalization effects are different from what is observed for the zone-center q = 0 case. To explain our experimental findings, we explored the phonon self-energy for the phonons with nonzero wave vectors (q not equal 0) in single-layer graphene in which the frequencies and decay widths are expected to behave oppositely to the behavior observed in the corresponding zone-center q = 0 processes. Within this framework, we resolve the identification of the phonon modes contributing to the G(star) Raman feature at 2450 cm(-1) to include the iTO + LA combination modes with q not equal 0 and also the 2iTO overtone modes with q = 0, showing both to be associated with wave vectors near the high symmetry point K in the Brillouin zone.
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