Journal
PHYSICAL REVIEW LETTERS
Volume 109, Issue 20, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.109.206802
Keywords
-
Categories
Funding
- Ministry of Science and Technology of China [2011CB921901, 2011CB606405]
- National Natural Science Foundation of China [11074139, 11174167, 11104155]
- National Nuclear Security Administration, Office of Nuclear Nonproliferation Research and Engineering of U.S. DOE [NA-22]
- DOE/BES [DE-SC0002623]
Ask authors/readers for more resources
It is highly desirable to integrate graphene into existing semiconductor technology, where the combined system is thermodynamically stable yet maintain a Dirac cone at the Fermi level. First-principles calculations reveal that a certain transition metal (TM) intercalated graphene/SiC(0001), such as the strongly bound graphene on SiC with Mn intercalation, could be such a system. Different from freestanding graphene, the hybridization between graphene and Mn/SiC leads to the formation of a dispersive Dirac cone of primarily TM d characters. The corresponding Dirac spectrum is still isotropic, and the transport behavior is nearly identical to that of freestanding graphene for a bias as large as 0.6 V, except that the Fermi velocity is half that of graphene. A simple model Hamiltonian is developed to qualitatively account for the physics of the transfer of the Dirac cone from a dispersive system (e. g., graphene) to an originally nondispersive system (e.g., TM).
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available