Journal
PHYSICAL REVIEW LETTERS
Volume 109, Issue 18, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.109.186403
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Funding
- IAMDN of Rutgers University
- National Science Foundation [NSF DMR-0845464, NSF DMR-1006492]
- Office of Naval Research [ONR N000140910749]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1006492] Funding Source: National Science Foundation
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By combining transport and photoemission measurements on (Bi1-xInx)(2)Se-3 thin films, we report that this system transforms from a topologically nontrivial metal into a topologically trivial band insulator through three quantum phase transitions. At x approximate to 3%-7%, there is a transition from a topologically nontrivial metal to a trivial metal. At x approximate to 15%, the metal becomes a variable-range-hopping insulator. Finally, above x approximate to 25%, the system becomes a true band insulator with its resistance immeasurably large even at room temperature. This material provides a new venue to investigate topologically tunable physics and devices with seamless gating or tunneling insulators.
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