4.8 Article

Raman Spectroscopy Study of Rotated Double-Layer Graphene: Misorientation-Angle Dependence of Electronic Structure

Journal

PHYSICAL REVIEW LETTERS
Volume 108, Issue 24, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.108.246103

Keywords

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Funding

  1. Office of Energy Research, Materials Sciences and Engineering Division, of the US Department of Energy [DE-AC02-05CH11231]
  2. National Science Foundation within the Center of Integrated Nanomechanical Systems [EEC-0832819]
  3. National Science Foundation [0906539, DMR10-1006184]
  4. Office of Naval Research (MURI)
  5. U.S. Department of Energy [DE-AC02-05CH11231]
  6. Direct For Mathematical & Physical Scien [0906539] Funding Source: National Science Foundation
  7. Division Of Materials Research [0906539] Funding Source: National Science Foundation

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We present a systematic Raman study of unconventionally stacked double-layer graphene, and find that the spectrum strongly depends on the relative rotation angle between layers. Rotation-dependent trends in the position, width and intensity of graphene 2D and G peaks are experimentally established and accounted for theoretically. Our theoretical analysis reveals that changes in electronic band structure due to the interlayer interaction, such as rotational-angle dependent Van Hove singularities, are responsible for the observed spectral features. Our combined experimental and theoretical study provides a deeper understanding of the electronic band structure of rotated double-layer graphene, and leads to a practical way to identify and analyze rotation angles of misoriented double-layer graphene.

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