4.8 Article

Quantum Hall Effect in Twisted Bilayer Graphene

Journal

PHYSICAL REVIEW LETTERS
Volume 107, Issue 21, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.107.216602

Keywords

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Funding

  1. DFG
  2. DOE [DE-FG02-08ER46512]
  3. ONR [MURI N00014-09-1-1063]
  4. NRF-CRP [R-144-000-295-281]

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We address the quantum Hall behavior in twisted bilayer graphene transferred from the C face of SiC. The measured Hall conductivity exhibits the same plateau values as for a commensurate Bernal bilayer. This implies that the eightfold degeneracy of the zero energy mode is topologically protected despite rotational disorder as recently predicted. In addition, an anomaly appears. The densities at which these plateaus occur show a magnetic field dependent offset. It suggests the existence of a pool of localized states at low energy, which do not count towards the degeneracy of the lowest band Landau levels. These states originate from an inhomogeneous spatial variation of the interlayer coupling.

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