Journal
PHYSICAL REVIEW LETTERS
Volume 107, Issue 19, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.107.195501
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Funding
- Swedish Foundation for Strategic Research
- Swedish Research Council
- Swedish Energy Agency
- Swedish National Infrastructure for Computing [SNIC 011/04-8, SNIC001-10-223]
- Knut and Alice Wallenberg Foundation
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Transition metal defects were studied in different polytypes of silicon carbide (SiC) by ab initio supercell calculations. We found asymmetric split-vacancy (ASV) complexes for these defects that preferentially form at only one site in hexagonal polytypes, and they may not be detectable at all in cubic polytype. Electron spin resonance study demonstrates the existence of ASV complex in niobium doped 4H polytype of SiC.
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