Journal
PHYSICAL REVIEW LETTERS
Volume 107, Issue 12, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.107.126806
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Funding
- EU [228043]
- French ANR [ANR-08-JCJC-0034-01]
- LAAS-CNRS (RTB network)
- NSF [DMR-1007028]
- MICINN (Spain) [FIS2008-00124]
- CONSOLIDER [CSD2007-00010]
- Agence Nationale de la Recherche (ANR) [ANR-08-JCJC-0034] Funding Source: Agence Nationale de la Recherche (ANR)
- ICREA Funding Source: Custom
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By using high-magnetic fields (up to 60 T), we observe compelling evidence of the integer quantum Hall effect in trilayer graphene. The magnetotransport fingerprints are similar to those of the graphene monolayer, except for the absence of a plateau at a filling factor of nu = 2. At a very low filling factor, the Hall resistance vanishes due to the presence of mixed electron and hole carriers induced by disorder. The measured Hall resistivity plateaus are well reproduced theoretically, using a self-consistent Hartree calculations of the Landau levels and assuming an ABC stacking order of the three layers.
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