Journal
PHYSICAL REVIEW LETTERS
Volume 106, Issue 4, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.106.046803
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Funding
- FNRS of Belgium
- ETSF [211956]
- NANOSIM [ANR-09-NANO-016-01]
- ICREA Funding Source: Custom
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Quantum transport properties of disordered graphene with structural defects (Stone-Wales and divacancies) are investigated using a realistic pi-pi* tight-binding model elaborated from ab initio calculations. Mean free paths and semiclassical conductivities are then computed as a function of the nature and density of defects (using an order-N real-space Kubo-Greenwood method). By increasing the defect density, the decay of the semiclassical conductivities is predicted to saturate to a minimum value of 4e(2)/pi h over a large range (plateau) of carrier density (>0.5 X 10(14) cm(-2)). Additionally, strong contributions of quantum interferences suggest that the Anderson localization regime could be experimentally measurable for a defect density as low as 1%.
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