Journal
PHYSICAL REVIEW LETTERS
Volume 107, Issue 3, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.107.037201
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Funding
- NSF [0704240]
- DFG-Center for Functional Nanostructures
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [0704240] Funding Source: National Science Foundation
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We present experimental data and a theoretical interpretation of the conductance near the metalinsulator transition in thin ferromagnetic Gd films of thickness b approximate to 2-10 nm. A large phase relaxation rate caused by scattering of quasiparticles off spin-wave excitations renders the dephasing length L phi less than or similar to b in the range of sheet resistances considered, so that the effective dimension is d = 3. The conductivity data at different stages of disorder obey a fractional power-law temperature dependence and collapse onto two scaling curves for the metallic and insulating regimes, indicating an asymmetric metal-insulator transition with two distinctly different critical exponents; the best fit is obtained for a dynamical exponent z approximate to 2.5 and a correlation (localization) length critical exponent v_ approximate to 1: 4 (v(+) approximate to 0.8) on the metallic (insulating) side.
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