Parallel Electron-Hole Bilayer Conductivity from Electronic Interface Reconstruction

The perovskite SrTiO(3)-LaAlO(3) structure has advanced to a model system to investigate the rich electronic phenomena arising at polar oxide interfaces. Using first principles calculations and transport measurements we demonstrate that an additional SrTiO(3) capping layer prevents atomic reconstruction at the LaAlO(3) surface and triggers the electronic reconstruction at a significantly lower LaAlO3 film thickness than for the uncapped systems. Combined theoretical and experimental evidence (from magnetotransport and ultraviolet photoelectron spectroscopy) suggests two spatially separated sheets with electron and hole carriers, that are as close as 1 nm.