Journal
PHYSICAL REVIEW LETTERS
Volume 105, Issue 16, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.105.166601
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Funding
- ONR-MURI
- NSF
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [819762] Funding Source: National Science Foundation
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We study the electronic transport properties of dual-gated bilayer graphene devices. We focus on the regime of low temperatures and high electric displacement fields, where we observe a clear exponential dependence of the resistance as a function of displacement field and density, accompanied by a strong nonlinear behavior in the transport characteristics. The effective transport gap is typically 2 orders of magnitude smaller than the optical band gaps reported by infrared spectroscopy studies. Detailed temperature dependence measurements shed light on the different transport mechanisms in different temperature regimes.
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