4.8 Article

Decomposition Controlled by Surface Morphology during Langmuir Evaporation of GaAs

Journal

PHYSICAL REVIEW LETTERS
Volume 105, Issue 3, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.105.035702

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Funding

  1. Australian Research Council [DP0985290]
  2. Australian Research Council [DP0985290] Funding Source: Australian Research Council

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When GaAs is heated in vacuum, it decomposes into Ga and As as it evaporates. Real-time in situ surface electron microscopy reveals striking bursts of daughter droplet nucleation and growth when coalescence of large parent droplets exposes nonplanar surface regions. We analyze the behavior, predicting a morphology-dependent congruent evaporation temperature. Based on this we propose a new approach for the self-assembly and positioning of quantum structures via droplet epitaxy, which we demonstrate at the proof-of-concept level.

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