Journal
PHYSICAL REVIEW LETTERS
Volume 105, Issue 24, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.105.246804
Keywords
-
Categories
Funding
- Sloan and Packard Foundations
- DARPA [N66001-09-1-2020]
- NSF through the Princeton Center for Complex Materials [DMR-0819860, DMR-0846341]
- UCSB National Science Foundation DMR Materials Research Science and Engineering Center
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [819860, 0846341] Funding Source: National Science Foundation
Ask authors/readers for more resources
We study quantum coherence in a semiconductor charge qubit formed from a GaAs double quantum dot containing a single electron. Voltage pulses are applied to depletion gates to drive qubit rotations and noninvasive state readout is achieved using a quantum point contact charge detector. We measure a maximum coherence time of similar to 7 ns at the charge degeneracy point, where the qubit level splitting is first-order insensitive to gate voltage fluctuations. We compare measurements of the coherence time as a function of detuning with numerical simulations and predictions from a 1/f noise model.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available