Journal
PHYSICAL REVIEW LETTERS
Volume 105, Issue 4, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.105.048302
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Funding
- European Integrated project PicoInside [FGP-015847]
- GENCI-IDRIS [2010-096459]
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The reversible hopping of a bistable atom on the Si(100)-(2 x 1):H surface is activated nonlocally by hole injection into Si-Si bond surface states with a low temperature (5 K) scanning tunneling microscope. In the contact region, at short distances (<1.5 nm) between the hole injection site and the bistable atom, the hopping yield of the bistable atom exhibits remarkable variations as a function of the hole injection site. It is explained by the density of state distribution along the silicon bond network that shows charge-transfer pathways between the injection sites and the bistable atom.
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