In-Plane Transport and Enhanced Thermoelectric Performance in Thin Films of the Topological Insulators Bi2Te3 and Bi2Se3

Several small-band-gap semiconductors are now known to protect metallic surface states as a consequence of the topology of the bulk electron wave functions. The known topological insulators'' with this behavior include the important thermoelectric materials Bi2Te3 and Bi2Se3, whose surfaces are observed in photoemission experiments to have an unusual electronic structure with a single Dirac cone. We study inplane (i.e., horizontal) transport in thin films made of these materials. The surface states from top and bottom surfaces hybridize, and conventional diffusive transport predicts that the tunable hybridization-induced band gap leads to increased thermoelectric performance at low temperatures. Beyond simple diffusive transport, the conductivity shows a crossover from the spin-orbit-induced antilocalization at a single surface to ordinary localization.