Journal
PHYSICAL REVIEW LETTERS
Volume 105, Issue 15, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.105.156601
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Funding
- Ministry of Education, Culture, Sports, Science and Technology (MEXT) [18686050, 22360265]
- Mitsubishi Foundation
- Kato Science Foundation
- Shimadzu Science Foundation
- Grants-in-Aid for Scientific Research [22360265, 18686050] Funding Source: KAKEN
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We report on the inversion of spin-dependent photocurrent via interface localized states formed at the interface of an Fe/n-AlGaAs/GaAs quantum well heterostructure by means of an optical spin orientation technique. A careful adjustment of the excitation photon energy, which is determined by a separate analysis of electroluminescence spectra under a spin injection condition, enables us to explore the spin-dependent characteristics of photoelectron transmission from the quantum well into Fe. The bias dependence of the spin-dependent photocurrent shows clear spikelike features at the voltage which is compatible with the formation of the interface localized resonant states in the Schottky depletion layer.
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