Journal
PHYSICAL REVIEW LETTERS
Volume 104, Issue 1, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.104.016601
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Funding
- DFG [SPP1285, GRK 638]
- Natural Science Foundation of China [10725417]
- National Basic Research Program of China [2006CB922005]
- Chinese Academy of Sciences
- China Postdoctoral Science Foundation
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A realistic pseudopotential model is introduced to investigate the phonon-induced spin relaxation of conduction electrons in bulk silicon. We find a surprisingly subtle interference of the Elliott and Yafet processes affecting the spin relaxation over a wide temperature range, suppressing the significance of the intravalley spin-flip scattering, previously considered dominant, above roughly 120 K. The calculated spin relaxation times T-1 agree with the spin resonance and spin injection data, following a T-3 temperature dependence. The valley anisotropy of T-1 and the spin relaxation rates for hot electrons are predicted.
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