4.8 Article

Tuning the Exciton Binding Energies in Single Self-Assembled InGaAs/GaAs Quantum Dots by Piezoelectric-Induced Biaxial Stress

Journal

PHYSICAL REVIEW LETTERS
Volume 104, Issue 6, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.104.067405

Keywords

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Funding

  1. DFG [FOR730]
  2. BMBF [01BM459]
  3. NWO (VIDI)
  4. CAS-MPG
  5. NSFC China [60625402]

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We study the effect of an external biaxial stress on the light emission of single InGaAs/GaAs(001) quantum dots placed onto piezoelectric actuators. With increasing compression, the emission blueshifts and the binding energies of the positive trion (X(+)) and biexciton (XX) relative to the neutral exciton (X) show a monotonic increase. This phenomenon is mainly ascribed to changes in electron and hole localization and it provides a robust method to achieve color coincidence in the emission of X and XX, which is a prerequisite for the possible generation of entangled photon pairs via the recently proposed time reordering'' scheme.

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